Intel details progress on fabbing 2D transistors a few atoms thick in standard high volume fab production environment — chipmaker outlines 300-mm fab compatible with integration of 2D transistor contacts and gate stacks

Intel and imec demonstrate the first 300-mm, fab-compatible integration of contacts and gate stacks for 2D transistors, marking a critical step in turning long-studied 2D materials from lab experiments into a realistic fut…

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Intel installs industry’s first commercial High-NA EUV lithography tool — ASML Twinscan EXE:5200B sets the stage for 14A

Intel has installed and qualified ASML’s TWINSCAN EXE:5200B, the first High-NA EUV lithography tool designed for commercial production, reiterating Intel’s plans to use High-NA EUV patterning for 14A process technology and…

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New 1.4nm nanoimprint lithography template could reduce the need for EUV steps in advanced process nodes — questions linger as no foundry has yet committed to nanoimprint lithography for high-volume manufacturing

Japan’s Dai Nippon Printing (DNP) claims to have developed a nanoimprint lithography template capable of patterning logic with a feature size of 1.4nm, with plans for mass production in 2027.
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Qualcomm’s Ventana acquisition points to a long-term RISC-V strategy to complement its Arm lineup

Qualcomm has agreed to acquire Ventana Micro Systems, a RISC-V CPU specialist whose engineers have spent several years pushing the open instruction set toward high-performance server and edge designs.
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